Femtosecond siliconpulses from laser-produced plasmas
- 19 December 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review E
- Vol. 65 (1) , 016412
- https://doi.org/10.1103/physreve.65.016412
Abstract
Ultrashort bursts of silicon x-ray radiation from femtosecond-laser-produced plasmas have been generated. A cross-correlation measurement employing a laser-triggered ultrafast structural change of a CdTe crystal layer (320 nm) shows a pulse duration between 200 fs and 640 fs. This result is corroborated by particle in cell simulations combined with a Monte-Carlo electron stopping code and calculations on the structural changes of the crystal lattice.
Keywords
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