Very low threshold current density SCH-MQW laser diodes emitting at 1.55µm

3 August 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (16) , 1103-1104
https://doi.org/10.1049/el:19890738

Abstract

GaInAs/AlGaInAs/InP separate-confinement heterostructure multiquantum well(SCH-MQW) laser diodes emitting at 1.55μm have been fabricated by atmospheric-pressure MOCVD. Room-temperature pulsed threshold current densities were 940Acm⁻² and 830Acm⁻² for 500μm and 800μm-long cavities, respectively. These are the lowest values reported to date for long wavelength MQW laser operation.

Keywords

MULTIPLE QUANTUM WELL
LONG WAVELENGTH MQW LASER OPERATION
SEMICONDUCTORS
ATMOSPHERIC-PRESSURE MOCVD
ROOM TEMPERATURE OPERATION
CVD EPITAXIAL GROWTH
SEPARATE-CONFINEMENT HETEROSTRUCTURE
1.55 MICRON
LOW THRESHOLD CURRENT DENSITY
SCH-MQW LASER DIODES
GAINAS-ALGAAS-INP
800 MICRON
MOVPE
500 MICRON
MULTIQUANTUM WELL

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