Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing
- 28 March 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (13) , 1338-1341
- https://doi.org/10.1103/physrevlett.60.1338
Abstract
We demonstrate that a GaAs-AlAs superlattice can be switched from indirect to direct, in both real and reciprocal spaces, by application of a modest axial electric field. The crossover region is found to be an anticrossing, manifesting the presence of Γ-X mixing by a potential measured to be of the order of 1 meV. This value is corroborated by time-decay measurements performed on different superlattices.Keywords
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