CCl 4 doping of GaN grown by metalorganic molecular beam epitaxy
- 10 April 1995
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (15) , 1969-1971
- https://doi.org/10.1063/1.113293
Abstract
Hole concentrations up to 1017 cm−3 are achieved in GaN doped with C from a CCl4 source during metalorganic molecular beam epitaxy at 700 °C. The hole mobility under these conditions is 103 cm2 V−1 s−1 at 300 K. The deposition rate of the GaN is reduced by addition of CCl4 to the growth chemistry even at low flow rates and net etching is observed for a halocarbon flow above 1.1 sccm under our conditions. Annealing up to 800 °C did not increase the hole concentration indicating that residual hydrogen passivation of the acceptors is not significant when employing a He carrier gas for transporting the group III metalorganic precursor (triethylgallium).Keywords
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