Atomic Layer Epitaxy of Copper: Growth and Selectivity in the Cu(II)‐2,2,6,6‐tetramethyl‐3,5‐heptanedionate/ Process

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Abstract
The deposition of copper by means of atomic layer epitaxy is reported. Using Cu(II)‐2,2,6,6‐tetramethyl‐3,5‐heptanedionate as the precursor, pure and specular copper films were deposited at deposition temperatures below 200°C. This is more than 150°C lower than in previous reports for the same precursor where chemical vapor deposition has been employed. The process was self‐limited in the temperature range 190 to 260°C. Area‐selective deposition was achieved on platinum seeded substrates vs. unseeded glass slides or oxidized metal surfaces in the temperature range 175 to 300°C. At higher temperatures, the selectivity was lost, and nucleation was independent of substrate material because of a thermal decomposition of the precursor.

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