The memory effect in dielectric response
- 20 December 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (35) , 6547-6554
- https://doi.org/10.1088/0022-3719/18/35/019
Abstract
A new approach to the theory of dielectric response is presented. In this formulation, the memory effect, which must be present in order to account for the empirical dielectric response of most dielectric materials, is directly introduced in the equations governing the system dynamics. As a particular case, it has been applied to a system with a dielectric response of the Williams-Watts type.Keywords
This publication has 12 references indexed in Scilit:
- A transient-state theory of dielectric relaxation and the Curie-von Schweidler lawJournal of Physics C: Solid State Physics, 1983
- Laws governing dielectric relaxationJournal of Physics C: Solid State Physics, 1983
- Dispersive diffusion transport and noise, time-dependent diffusion coefficient, generalized Einstein-Nernst relation, and dispersive diffusion-controlled unimolecular and bimolecular reactionsPhysical Review B, 1981
- Nonadiabatic approach to tunneling centers and their isotope effectPhysical Review B, 1981
- Comments on Many‐Body Dielectric Relaxation in SolidsPhysica Status Solidi (b), 1980
- Characterisation of dielectric loss in solids and liquidsNature, 1978
- A many-body model of dieletric polarisation in solids. II. The universal modelPhysica Status Solidi (b), 1977
- Effects of in-band defect-induced phonon resonant modes on phonon-assisted defect tunnelingPhysical Review B, 1977
- Transport, Collective Motion, and Brownian MotionProgress of Theoretical Physics, 1965
- Statistical-Mechanical Theory of Irreversible Processes. I. General Theory and Simple Applications to Magnetic and Conduction ProblemsJournal of the Physics Society Japan, 1957