On the theory of carrier number fluctuations in MOS devices
- 31 July 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (7) , 563-565
- https://doi.org/10.1016/0038-1101(89)90113-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sourcesProceedings of the IEEE, 1988
- Calculation of Surface Charge Noise at the Si-SiO2 InterfacePhysica Status Solidi (a), 1987
- A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETsSolid-State Electronics, 1987
- Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface statesIEEE Transactions on Electron Devices, 1984