New Failure Mechanisms in Sputtered Aluminum-Silicon Films
- 1 April 1984
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 8th Reliability Physics Symposium
- No. 07350791,p. 6-8
- https://doi.org/10.1109/irps.1984.362013
Abstract
A new failure mechanism resulting in open metal bit- lines was observed during reliability testing of vendor 64k dynamic random access memory (RAIM) products using sputtered Al-Si metallurgy. Life test data, physical failure analysis, and metal film characterization are presented, The observed phenomenan is not strictly electromigratiotn, but rather a temperature-dependent metal-deformation process, such as creep, resulting in intergranular fracture.Keywords
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