S-vacancy energy levels in AgInS2
- 1 March 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (5) , 1544-1547
- https://doi.org/10.1063/1.336461
Abstract
A luminescence study of energy levels due to lattice defects in AgInS2, which belongs to the I‐III‐VI2 compounds, is reported in this article. As‐grown and annealed crystals under maximum or minimum sulfur pressure have been used. We have found a donor level at 70 meV, an acceptor level at 70 meV, and a level (acceptor or donor) at 100 meV. Two of these levels (at least) are attributed to the sulfur vacancy.This publication has 10 references indexed in Scilit:
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