Lumped circuit model of two-dimensional to two-dimensional tunneling transistors

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Abstract
A lumped circuit model for the two‐dimensional (2D) to 2D tunneling transistor is proposed. A new concept of virtual separation of nodes is introduced to distinguish the energy of the subband edges and the Fermi energy of the quantum wells in the circuit diagram. The two virtually separated nodes are connected by the quantum capacitance due to the quantum confinement of the electrons in each well. This concept provides a simple and accurate representation of the device operation by the geometrical capacitances, the quantum capacitances, and the voltage dependent tunneling resistance.