Inductive Semiconductor Elements and Their Application in Bandpass Amplifiers
- 1 July 1961
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Military Electronics
- Vol. MIL-5 (3) , 239-250
- https://doi.org/10.1109/IRET-MIL.1961.5008354
Abstract
Filter circuits using wire-wound inductors are hard to microminiaturize because coils are rather bulky. This paper discusses different inductive semiconductor devices which may replace coils where space is a problem. Forward-biased diodes, properly designed, behave like very lossy inductances. Combining them with negative-resistance devices increases the Q but creates serious temperature and stability problems. Relatively temperature-stable inductance elements are possible by combination of a phase shift network with a transistor. The principle, well-known in tube circuitry, gives high inductances with only a moderate Q because of the low input impedance of the transistor. Promising results have been demonstrated with a transistor operating in the a cutoff region. The device is dc stable, and has a moderate temperature sensitivity which might be partly compensated if necessary. Avalanche multiplication is used to reduce the damping resistance of the inductive transistor. Simple band-pass amplifier circuits are presented in the last section to demonstrate how to use the inductive transistor in practice.Keywords
This publication has 4 references indexed in Scilit:
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- Semiconductor inductance diodePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1960
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