30 W VHF 6H-SiC power static induction transistor
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10794700,p. 47-55
- https://doi.org/10.1109/cornel.1995.482419
Abstract
6H-SiC Static Induction Transistors (SITs) have been demonstrated, using SiC specific semiconductor processing technologies such as, VPE, reactive ion etching and self aligned sidewall Schottky gates. Under test conditions, 6H-SiC SITs developed 38 W of output power at 175 MHz, a power added efficiency of 60%, and an associated gain of 10 dB. The maximum channel current was 300 mA/cm, and the maximum blocking voltage was 200 V.Keywords
This publication has 1 reference indexed in Scilit:
- Field-effect transistor versus analog transistor (static induction transistor)IEEE Transactions on Electron Devices, 1975