A lumped model analysis of noise in semiconductor devices
- 1 April 1959
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 6 (2) , 133-140
- https://doi.org/10.1109/T-ED.1959.14464
Abstract
A clear picture of the noise properties of semiconductor devices may be gained through a study of lumped models. When a semiconductor device is represented by a lumped model it is found that all the noise may be accounted for by associating a noise-current generator with each of the conductances appearing in the lumped model. The expressions describing these noise-current generators are easily found and the determination of the device noise properties involves only lumped model analysis. Such analysis applied to a diode model and a transistor model yields results which are in agreement with the results of other authors and with experimental measurements cited by them. The mechanisms considered in this paper do not, however, account for the so-called 1/f noise.Keywords
This publication has 5 references indexed in Scilit:
- Lumped Models of Transistors and DiodesProceedings of the IRE, 1958
- Behavior of Noise Figure in Junction TransistorsProceedings of the IRE, 1957
- Theory and Experiments on Shot Noise in Semiconductor Junction Diodes and TransistorsProceedings of the IRE, 1957
- Physical Sources of NoiseProceedings of the IRE, 1956
- Theory of Shot Noise in Junction Diodes and Junction TransistorsProceedings of the IRE, 1955