A 2.5 V 256-level non-volatile analog storage device using EEPROM technology
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This integrated circuit stores 256 analog voltage levels in high density, non-volatile memory with /spl sim/7.5m V resolution per level. By contrast, the multilevel storage capacity of a typical digital non-volatile memory is 4-level per cell. The integrated circuit operates over a voltage range of 2.5 V to 5.5 V. Previous analog storage implementation use a 5.0 V supply for /spl sim/12 mV equivalent resolution per level in a 128 k EEPROM. Author(s) Van Tran, H. Information Storage Devices Inc., San Jose, CA, USA Blyth, T. ; Sowards, D. ; Engh, L. ; Nataraj, B.S. ; Dunne, T. ; Hai Wang ; Vishal Sarin ; Tin Lam ; Nazarian, H. ; Genda HuKeywords
This publication has 2 references indexed in Scilit:
- A multilevel-cell 32 Mb flash memoryPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A Non-volatile Analog Storage Device Using EEPROM TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991