A device model for the amorphous-silicon staggered-electrode thin-film transistor
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (12) , 2915-2922
- https://doi.org/10.1109/16.40955
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- The relationship between space-charge-limited current and density of states in amorphous siliconPhilosophical Magazine Part B, 1984
- Physics of amorphous silicon based alloy field-effect transistorsJournal of Applied Physics, 1984
- DETERMINATION OF MIDGAP DENSITY OF STATES IN a-Si : H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTSLe Journal de Physique Colloques, 1981