Gain-Bandwidth Optimization of Avalanche-Diode Amplifiers
- 1 November 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 18 (11) , 932-942
- https://doi.org/10.1109/tmtt.1970.1127372
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Active IMPATT Diode Parameters Obtained by Computer Reduction of Experimental DataIEEE Transactions on Microwave Theory and Techniques, 1970
- A Multistage High-Power Avalanche Amplifier at X BandIEEE Journal of Solid-State Circuits, 1969
- A large signal analysis of IMPATT diodesIEEE Transactions on Electron Devices, 1968
- Avalanche Region of IMPATT DiodesBell System Technical Journal, 1966
- Electronic tuning effects in the read microwave avalanche diodeIEEE Transactions on Electron Devices, 1966
- A Broad-Banding Theory for Varactor Parametric Amplifiers-Part IIEEE Transactions on Circuit Theory, 1964
- Prototypes for Use in Broadbanding Reflection AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1963
- Design Theory of Optimum Negative-Resistance AmplifiersProceedings of the IRE, 1961
- A Study of the Optimum Design of Wide-Band Parametric Amplifiers and Up-ConvertersIEEE Transactions on Microwave Theory and Techniques, 1961
- Theoretical limitations on the broadband matching of arbitrary impedancesJournal of the Franklin Institute, 1950