The location of the lowest conduction band minima in gallium phosphide from bound exciton luminescence
- 31 December 1976
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 14 (3) , 55-79
- https://doi.org/10.1016/s0022-2313(76)90192-7
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Camel's back structure of the conduction band in GaPSolid State Communications, 1975
- A study of intervalley scattering in n-Si by the magnetophonon effectSolid State Communications, 1974
- Luminescence of GaP at high excitationJournal of Applied Physics, 1973
- Optical Properties of Excitons Bound to Neutral Acceptors in GaPPhysical Review B, 1971
- Intrinsic recombination radiation from GaPJournal of Luminescence, 1971
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Absorption and Luminescence of Excitons at Neutral Donors in Gallium PhosphidePhysical Review B, 1967
- Intrinsic Absorption-Edge Spectrum of Gallium PhosphidePhysical Review B, 1966
- Intervalley-Scattering Selection Rules in III-V SemiconductorsPhysical Review B, 1966
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959