Large gain-bandwidth-product, low dark-current InAlAs/lnAlGaAs quaternary-well superlattice avalanche photodiodes
- 1 January 1993
- proceedings article
- Published by Optica Publishing Group
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- InGaAsP/InAlAs superlattice avalanche photodiodeIEEE Journal of Quantum Electronics, 1992
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratioApplied Physics Letters, 1982
- Impact ionisation in multilayered heterojunction structuresElectronics Letters, 1980