Barrier Height of Titanium Silicide Schottky Barrier Diodes
- 1 November 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (11A) , L894
- https://doi.org/10.1143/jjap.25.l894
Abstract
Schottky barrier diodes were fabricated on n-type Si surfaces with high resistivity. Barriers were produced by TiSi or TiSi2. Barrier height and resistivity of titanium silicide were examined in relation to phase differences identified by X-ray diffraction analysis. Barrier height was found to be unaffected by silicide phase.Keywords
This publication has 2 references indexed in Scilit:
- Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfacesPhysical Review B, 1983
- Constitution of Binary AlloysJournal of the Electrochemical Society, 1958