Very high gain Nd:YLF amplifiers
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 24 (5) , 712-715
- https://doi.org/10.1109/3.186
Abstract
High-gain Nd:YLF rod amplifiers in which single-pass, small signal gains of over 1700 have been obtained along with stored energy densities >or=0.4 J/cm/sup 2/ are discussed. The ability of Nd:YLF amplifiers to support such gains is a result of high parasitic oscillation thresholds, due primarily to the low refractive index of the material. These results suggest that Nd:YLF is an excellent candidate for amplifiers where high specific stored energies and/or very high gains are required.Keywords
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