Solid-State Detectors for Beta-Ray Spectroscopy below 4.2°K

Abstract
Surface barrier detectors operated at temperatures below 4.2°K are found to be sensitive to beta radiation throughout the volume of the silicon wafer and to give good resolution for conversion electrons (8.3 keV FWHM at 482 keV). The pulse height and resolution for a 1‐mm‐thick wafer are found to improve slightly with increasing reverse bias in the region of 300 to 530 V.

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