Low temperature reactive sputter deposition of vanadium oxide

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Abstract
In the present study, vanadium oxide films were grown on water-cooled sapphire, silicon, and glass substrates by reactive sputter deposition using a vanadium target and rf-excited argon discharges containing 0%–25% oxygen. Optical emission spectroscopy was used for in situ discharge diagnostics. Films were characterized by x-ray diffraction to determine crystallography and by double-beam spectrophotometry to determine optical absorption behavior in the 200–1200 nm spectral region. The results show that film crystallography evolves from single (110) orientation body-centered cubic vanadium to single (001) orientation orthorhombic vanadium pentoxide to a material in which there is no long range atomic order detectable by x-ray diffraction as the sputtering gas oxygen content is increased. Changes in optical absorption behavior which accompany the decrease in atomic order are presented and discussed.

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