Effect of Hydrostatic Pressure on the Band Structure of InSb A Pseudopotential Calculation
- 1 July 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 112 (1) , 97-104
- https://doi.org/10.1002/pssb.2221120110
Abstract
The band structure of InSb is computed by the empirical pseudopotential method (EPM) including a nonlocal correction. The pressure dependence of energy gaps and wave functions for InSb is then calculated. The pressure coefficient of the momentum matrix element between valence and conduction band is found to be very small as is usually assumed. The pressure coefficients of the parameters of electron scattering on short‐range potential centres associated with ionized impurities in InSb are also given in comparison with experimental estimations.Keywords
This publication has 27 references indexed in Scilit:
- Spin dependent wave functions at some points of the brillouin zone of InSbPhysica Status Solidi (b), 1979
- Band structure of semiconductors under high stressPhysical Review B, 1977
- Spin‐Dependent Wave Functions and Band Parameters at the r Point of InSbPhysica Status Solidi (b), 1977
- Effect of hydrostatic pressure on the direct absorption edge of germaniumPhysical Review B, 1977
- Pressure dependence of energy gaps and refractive indices of tetrahedrally bonded semiconductorsPhysical Review B, 1974
- Calculated Valence-Band Densities of States and Photoemission Spectra of Diamond and Zinc-Blende SemiconductorsPhysical Review B, 1973
- A pseudopotential examination of the pressure coefficients of optical transitions in semiconductorsJournal of Physics and Chemistry of Solids, 1967
- Form Factors and Ultraviolet Spectra of Semiconductors at High PressurePhysical Review B, 1967
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Deformation Potentials in Silicon. III. Effects of a General Strain on Conduction and Valence LevelsPhysical Review B, 1963