An uncompensated silicon bipolar junction transistor fabricated using molecular beam epitaxy

1 November 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (11) , 293-295
https://doi.org/10.1109/EDL.1981.25438

Abstract

The first silicon bipolar junction transistor fabricated using molecular beam epitaxy is reported. Epitaxial layers defining the collector, base, and emitter regions are grown successively at 850°C. Because no thermal diffusion steps are involved, junction location and base width are precisely defined. The final structure is mesa isolated using reactive ion etching. A peak forward current gain of 60 is measured. This technique is expected to be applicable to the development of very narrow base, ultrahigh speed bipolar transistors.

Keywords

SILICON
MOLECULAR BEAM EPITAXIAL GROWTH
SUBSTRATES
ION BEAMS
ETCHING
EPITAXIAL LAYERS
DOPING
PROTECTION
PLASMA TEMPERATURE
BORON

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