Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation

Publisher Website

19 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/drc.1995.496282

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data
IEEE Transactions on Microwave Theory and Techniques, 1992
AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process
IEEE Electron Device Letters, 1987