Effects of strain and layer thickness on the growth of InxGa1−xAs–GaAs strained-layer superlattices

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Abstract
The effects of strain and layer thickness on the growth of InxGa1−xAs–GaAs strained-layer superlattices (SLS’s) by molecular beam epitaxy (MBE) is investigated. Data are presented on two series of InxGa1−xAs–GaAs SLS’s with x∼0.38 and x∼0.28. All of the SLS’s were grown consecutively with all fluxes and growth conditions remaining constant throughout. The only variation in the sample growth within each series was the layer thickness (shutter timing), which ranged from ∼20 to ∼800 Å. The growth rate for all the SLS’s is found to be constant and in close agreement with that predicted from much thicker layers. X-ray diffraction analysis of the SLS’s shows substantial broadening of diffracted peaks on highly mismatched SLS’s with relatively thick layers, although diffraction patterns of thin-layer SLS’s and thick single layers of InxGa1−xAs remain sharp. Scanning electron microscopy indicates the broadening in x-ray diffraction peaks is accompanied by an increased presence of structural defects in thick-layer SLS’s.

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