Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration
- 15 February 1997
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (4) , 2021-2023
- https://doi.org/10.1063/1.364058
Abstract
Optically pumped lasing from InGaN/GaN single heterojunctions (SH) was observed in an edge emitting configuration at 77 K. The heterojunctions were grown by atmospheric pressure metalorganic chemical vapor deposition on c-plane sapphire substrates. The frequency tripled output of a mode-locked titanium:sapphire laser with a pulse width of 250 fs, operating at 280 nm, was used as the photoexcitation source. The nonlinear dependence of output emission intensity on input power density, the observations of a strongly polarized output emission, and distinct Fabry–Perot modes are discussed.This publication has 13 references indexed in Scilit:
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