Silicon hall-effect power IC's for brushless motors
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (1) , 151-154
- https://doi.org/10.1109/t-ed.1982.20673
Abstract
The offset voltage which appears at the Hall electrodes in the absence of a magnetic field depends strongly on the mechanical stress. In order to reduce the effects of stress on the offset voltage, special wafer process and packaging techniques have been devised. A Hall device with a\langle 100 \rangledirection of current flow in theKeywords
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