Sharp Metal-Insulator Transition in a Random Solid
- 24 November 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 45 (21) , 1723-1726
- https://doi.org/10.1103/physrevlett.45.1723
Abstract
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value in bulk crystals of P-doped Si. Conductivities below increase by over as the density is raised by less than 1%, and do not rule out a discontinuous transition. However, over a wider density range the data can be fitted with a scaling form with a characteristic length that tends to diverge with the same exponent in the metal and insulator.
Keywords
This publication has 27 references indexed in Scilit:
- Observation of the Approach to a Polarization CatastrophePhysical Review Letters, 1980
- Possible Role of Incipient Anderson Localization in the Resistivities of Highly Disordered MetalsPhysical Review Letters, 1980
- A theory for the conductivity of a fermion gas moving in a strong three-dimensional random potentialJournal of Physics C: Solid State Physics, 1979
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979
- Electrons in disordered systems. Scaling near the mobility edgeZeitschrift für Physik B Condensed Matter, 1976
- Electrons in disordered systems and the theory of localizationPhysics Reports, 1974
- Conduction in non-crystalline systems IX. the minimum metallic conductivityPhilosophical Magazine, 1972
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958
- Electrical Properties of Germanium Semiconductors at Low TemperaturesPhysical Review B, 1955