Formation of high asymmetric oxide tunnelling barriers on niobium and tantalum
- 1 April 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 102 (3) , 221-230
- https://doi.org/10.1016/0040-6090(83)90089-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Zero-bias conductance dip and phonon features in the superconductor density of states observed on tantalum- and niobium-based tunneling junctionsPhysical Review B, 1982
- Metal-oxide-metal tunneling junctions on Ta and Nb: Background conductivity resulting from different oxide barriersJournal of Applied Physics, 1982
- Modification of tunneling barriers on Nb by a few monolayers of AlPhysical Review B, 1981
- Polarity-dependent tunneling conductance of Ta/Ta2O5/Ag junctionsJournal of Applied Physics, 1980
- Conductance of niobium oxide tunnel barriersThin Solid Films, 1979
- Eigenschaften von Tunnelkontakten auf den fünfwertigen supraleitenden Übergangsmetallen Nb, Ta und V / Properties of tunneling junctions on the superconducting transition-metals Nb, Ta, and VZeitschrift für Naturforschung A, 1976
- Ein neues Verfahren zur Präparation von Tantal/Silber und Niob/Silber Tunnel- kontakten / A New Method for the Preparation of Tantalum/Silver and Niobium/Silver Tunneling ContactsZeitschrift für Naturforschung A, 1976
- Molecular Vibration Spectra by Electron TunnelingPhysical Review Letters, 1966
- The Formation of Metal Oxide Films Using Gaseous and Solid ElectrolytesJournal of the Electrochemical Society, 1963
- Theory of the oxidation of metalsReports on Progress in Physics, 1949