Wavelength dependence of T0 in InGaAsP semiconductor laser diodes
- 26 April 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (17) , 2009-2011
- https://doi.org/10.1063/1.109516
Abstract
The temperature sensitivity of laser threshold current in single mode, wavelength tunable, InGaAsP bulk active region semiconductor lasers diodes is measured in the temperature range, 293 K≲T≲355 K and wavelength range 1.23 μm≲λ≲1.35 μm. When proper account is taken of peak gain variation with temperature, the temperature dependence of laser threshold current (parameterized by T0) is insensitive to lasing wavelength over a wide tuning range.Keywords
This publication has 7 references indexed in Scilit:
- Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 μm quantum well lasersApplied Physics Letters, 1993
- Effect of fixed emission wavelength on threshold current of InGaAsP semiconductor laser diodesElectronics Letters, 1992
- Temperature dependence of long wavelength semiconductor lasersApplied Physics Letters, 1992
- Long-wavelength InGaAsP/InP distributed feedback lasers incorporating gain-coupled mechanismIEEE Photonics Technology Letters, 1992
- Reduced temperature dependence of threshold current by broadband enhanced feedback: A new approach and demonstrationApplied Physics Letters, 1992
- Linewidth reduction in DFB laser by detuning effectElectronics Letters, 1987
- Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sourcesIEEE Journal of Quantum Electronics, 1984