Rapid thermal annealing of Si1−xGex layers formed by germanium ion implantation
- 1 May 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 88 (3) , 247-254
- https://doi.org/10.1016/0168-583x(94)95320-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Effect of ion implanted germanium profile on the characteristics of Si
1−
x
Ge
x
/Si heterojunction bipolar transistorsElectronics Letters, 1993
- Improved crystalline quality of Si1−xGex formed by low-temperature germanium ion implantationApplied Physics Letters, 1992
- Graded-bandgap SiGe bipolar transistor fabricated with germanium ion implantationMicroelectronic Engineering, 1991
- A study of the effect of misfit-induced strain on the kinetics of solid phase epitaxy in the Si1−xGex on 〈001〉 Si systemJournal of Applied Physics, 1991
- Composition and structure of Si–Ge layers produced by ion implantation and laser meltingJournal of Materials Research, 1991
- SiGe-channel n-MOSFET by germanium implantationIEEE Electron Device Letters, 1991
- Strain relief in compositionally graded Si1-xGex formed by high dose Ion implantationJournal of Electronic Materials, 1991
- The growth of strained Si1−xGex alloys on 〈001〉 silicon using solid phase epitaxyJournal of Materials Research, 1990
- Laser induced epitaxial regrowth of Si1-xGex/Si layers produced by Ge ion implantationApplied Surface Science, 1989
- High-dose Ge implantation into 〈100〉 SiNuclear Instruments and Methods, 1981