Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures
- 4 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (18) , 1263-1265
- https://doi.org/10.1063/1.97878
Abstract
We have observed resonant tunneling of electrons in AlAs‐GaAs‐AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current‐voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from the X point of the Brillouin zone, in which AlAs behaves as a quantum well and GaAs as a barrier.Keywords
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