Variation in the stoichiometry of thin silicon nitride insulating films on silicon and its correlation with memory traps

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Abstract
Auger electron spectroscopy and the internal photoelectric-effect technique have been used to investigate the chemical structure of the thin Si3N4 film as a function of deposition conditions and its correlation with impurity/defect related memory traps in Al–Si3N4–SiO2–Si structures. The silicon content in the Si3N4 film showed an increase of 7% for a decrease of the NH3 to SiH4 gas ratio from 300:1 to 25:1 and a corresponding increase in the trapped electron density from 0.95×1018 to 2.1×1018/cm3. The film was stoichiometric for gas ratios greater than 300:1 and for the deposition temperature range of 700–950 °C. The results suggest an association of trapped electronic charge with some structural defects in addition to excess silicon incorporated in the Si3N4 film as explained by the valence alternation pair defect model.

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