Current snap-back and negative differential resistance in layered PnνN structures
- 15 August 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (4) , 2091-2098
- https://doi.org/10.1063/1.368356
Abstract
This article reports an anomalous snap-back in the forward I–V characteristics of high power rectifiers having a buffer layer. The buffer layer is located at the rectifying junction. It is shown with the help of theoretical analysis and numerical simulations that the snap-back occurs due to a delay in the onset of high-level injection in the drift region. Conditions are identified for the observation of such an effect. Current density at which the snap-back occurs and the extent of the fall in voltage are shown to be strongly dependent on the doping, width and carrier lifetime of the buffer layer.This publication has 9 references indexed in Scilit:
- Lifetime in proton irradiated siliconJournal of Applied Physics, 1996
- Multiple proton energy irradiation for improved GTO thyristorsSolid-State Electronics, 1993
- Simulation of proton-induced local lifetime reduction in 10 kV diodesIEEE Transactions on Electron Devices, 1993
- Combined proton and electron irradiation for improved GTO thyristorsSolid-State Electronics, 1989
- Localized lifetime control in insulated-gate transistors by proton implantationIEEE Transactions on Electron Devices, 1986
- Production of Fast Switching Power Thyristors by Proton IrradiationIEEE Transactions on Nuclear Science, 1983
- The saturation characteristics of n-p-ν-n power transistorsIEEE Transactions on Electron Devices, 1970
- Reverse recovery processes in silicon power rectifiersProceedings of the IEEE, 1967
- Effects of Diffusion on Double Injection in InsulatorsPhysical Review B, 1965