Time-dependent Monte Carlo studies of diffusion with surface steps
- 15 July 1992
- journal article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 97 (2) , 1257-1265
- https://doi.org/10.1063/1.463966
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Time-dependent Monte Carlo studies of surface diffusionThe Journal of Chemical Physics, 1991
- GaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structuresJournal of Applied Physics, 1990
- Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffractionApplied Physics Letters, 1990
- Stability of crystals that grow or evaporate by step propagationApplied Physics Letters, 1990
- Molecular-dynamics simulation of amorphous and epitaxial Si film growth on Si(111)Physical Review B, 1990
- Evolution of terrace size distributions during thin-film growth by step-mediated epitaxyJournal of Applied Physics, 1990
- I n s i t u ellipsometry of thin-film deposition: Implications for amorphous and microcrystalline Si growthJournal of Vacuum Science & Technology B, 1989
- Classically exact surface diffusion constants at arbitrary temperatureJournal of Vacuum Science & Technology A, 1989
- Dynamics of strained-layer epitaxy: Simulation of growth and annealing of GexSi1−x/Si systemsJournal of Vacuum Science & Technology B, 1988
- Growth mechanism for molecular-beam epitaxy of group-IV semiconductorsPhysical Review B, 1988