Deep Level Generation Centres In Low Temperature Annealed Pre-Amorphised Silicon

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Abstract
Pre-amorphisation of silicon substrates with a high dose of 28Si+ is known to suppress the axial channelling of subsequent low energy boron implants and thus lead to shallow junction formation. However, it is shown that for amorphous layer regrowth below 800°C a high concentration of deep level donor defects (1-2 x 1017 cm-3) remains in the tail of the Si + implant. These have been directly correlated with the large leakage current densities (up to 10-A/cm2) measured in these low temperature activated devices. Smaller (tilde 10-5 A/cm2) leakage current densities were found in similarly pre-amorphised n+p diodes. It is shown that the difference can be explained by the donors forming a floating, and less easily depleted, n-type region in the n+p diodes.

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