Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer
- 1 December 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 310 (3) , 671-676
- https://doi.org/10.1016/0168-9002(91)91115-c
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Beam test results of an ion-implanted silicon strip detector on a 100 mm waferNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1991
- Ion-implanted silicon detectors processed on a 100 mm waferNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1991
- Beam test results from a prototype for the delphi microvertex detectorNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
- Development of high density readout for silicon strip detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1984