Processing of unipolar diodes with electron beams

11 October 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (21) , 863-865
https://doi.org/10.1049/el:19840586

Abstract

Low-energy ion implantation and multiple-scan electron-beam annealing have been used to produce bulk unipolar camel diodes and Schottky diodes with a range of barrier heights. Optimisation of results required precise doping and diffusion control.

Keywords

UNIPOLAR DIODES
ELECTRON-BEAM ANNEALING
SCHOTTKY DIODES
BARRIER HEIGHTS
DOPING CONTROL
LOW ENERGY ION IMPLANTATION
DIFFUSION CONTROL
CAMEL DIODES

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