Intervalley scattering rates in GaAs measured by time-resolved four-wave mixing spectroscopy
- 19 September 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (12) , 1065-1067
- https://doi.org/10.1063/1.100067
Abstract
A three‐pulse transient grating technique was used to measure the carrier dynamics in photoexcited GaAs. The four‐wave mixing signal exhibits a two component relaxation of different magnitudes for various probe energies. The fast relaxation mechanism is due to electrons in the L valleys scattering back to the Γ valley. The effective transfer time for L→Γ was found to be ≊8 ps. The slower relaxation arises from carrier recombination.Keywords
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