Heat generation in Si bipolar power devices: The relative importance of various contributions
- 1 October 1996
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (10) , 1463-1471
- https://doi.org/10.1016/0038-1101(96)00056-1
Abstract
No abstract availableKeywords
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- Carrier mobilities in silicon semi-empirically related to temperature, doping and injection levelSolid-State Electronics, 1981