p-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy

27 February 1995

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 66 (9) , 1112-1113
https://doi.org/10.1063/1.113829

Abstract

p‐type conduction in InN‐containing nitrides doped with Mg has been achieved by metalorganic vapor‐phase epitaxy. The hole concentration at room temperature is as high as 7×10¹⁷ cm⁻³. The activation energy of a Mg acceptor is estimated to be 204 meV. D–A pair emission with peak wavelength of about 405 nm is enhanced by thermal annealing.

Keywords

GALLIUM NITRIDES
INDIUM NITRIDES
MAGNESIUM ADDITIONS
DOPED MATERIALS
P−TYPE CONDUCTORS
ELECTRIC CONDUCTIVITY
ACTIVATION ENERGY
IMPURITY STATES
VAPOR PHASE EPITAXY
ANNEALING
EMISSION SPECTRA

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