Low dark current and high linearity InGaAs MSMphotodetectors
- 17 February 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (4) , 355-356
- https://doi.org/10.1049/el:19940215
Abstract
InGaAs metal-semiconductor-metal photodetectors with various barrier enhancement layers have been investigated. The responsivity at 1.55 µm wavelength varies between 0.21 and 0.43 A/W depending on layer structure, bias voltage and photosensitive area. Using a pseudomorphic In0.9Ga0.1P cap layer on InP for Schottky contacts, devices exhibit dark current densities as low as 44 µA/cm2. The responsivity is also much more linear than those of conventional devices with respect to both bias voltage and incident optical power level.Keywords
This publication has 6 references indexed in Scilit:
- 1.3 mu m InGaAs MSM photodetector with abrupt InGaAs/AlInAs interfaceIEEE Photonics Technology Letters, 1991
- High performance of Fe:InP/InGaAs metal/semiconductor/metal photodetectors grown by metalorganic vapor phase epitaxyIEEE Photonics Technology Letters, 1990
- High-speed performance of OMCVD grown InAlAs/InGaAs MSM photodetectors at 1.5 mu m and 1.3 mu m wavelengthsIEEE Photonics Technology Letters, 1989
- High-performance Al/sub 0.15/Ga/sub 0.85/As/In/sub 0.53/Ga/sub 0.47/As MSM photodetectors grown by OMCVDIEEE Transactions on Electron Devices, 1989
- An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectorsIEEE Electron Device Letters, 1988
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973