A Low-Noise L-Band Dielectric Resonator Stabilized Microstrip Oscillator
- 1 January 1987
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Design and performance of a unique microstrip L-band bipolar transistor dielectric resonator stabilized oscillator (DRO) is described which achieves ultralow single-sideband phase noise (-163 dBc/Hz at 100 kHz offset frequency), low I/f noise corner frequency of 12 kHz, with near-constant frequency (1280 +- 0.06 MHz) and power (12.55 +- 0.15 dBm) over -50° to 75°C. Circuit details to minimize noise as well as transistor selection criteria and measurements are presented. Back-to-back varactors provide 350 kHz electronic tuning range for phase-locking applications without any increase of noise.Keywords
This publication has 4 references indexed in Scilit:
- Highly Stabilized, Ultra-Low Noise FET Oscillator with Dielectric ResonatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Bipolar Transistor Ku-Band Oscillators with Low Phase-NoisePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A Microstrip Low-Noise X-Band Voltage-Controlled OscillatorIEEE Transactions on Microwave Theory and Techniques, 1979
- An Ultra-Low Noise Microwave SynthesizerIEEE Transactions on Microwave Theory and Techniques, 1979