Fourier Transform Infrared Photoluminescence

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Abstract
A commercial Fourier transform spectrometer has been modified to measure recombinant radiation (photoluminescence) under argon laser excitation from semiconducting and insu-lating solid samples at low temperatures. The experimental method is described detailing the criteria for optimizing the instrumentation and the limitations of the technique. The photoluminescence of following materials was studied as a function of laser intensity and wavelength and at various temperatures: (a) the large gap, indirect semiconductors Si, Ge, and SizGei_x, (b) the amorphous semiconductor a-Si:H, (c) the large gap, di-rect semiconductors, GaAs, InP, CdTe and Ga,Ini_,As, (d) the narrow gap, direct semiconductor, InSb, and (e) the insulator, KZni_1Co1F3, an infrared laser material.

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