A low-voltage tunneling-based silicon microaccelerometer
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (11) , 1875-1882
- https://doi.org/10.1109/16.641355
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Application of electrostatic feedback to critical damping of an integrated silicon capacitive accelerometerSensors and Actuators A: Physical, 1994
- Wide-bandwidth electromechanical actuators for tunneling displacement transducersJournal of Microelectromechanical Systems, 1994
- Mechanical-thermal noise in micromachined acoustic and vibration sensorsIEEE Transactions on Electron Devices, 1993
- A bulk silicon dissolved wafer process for microelectromechanical devicesJournal of Microelectromechanical Systems, 1992
- Batch-assembled multi-level micromachined mechanisms from bulk siliconJournal of Micromechanics and Microengineering, 1992
- Dynamic behavior and instability of field emitter surfacesIEEE Transactions on Electron Devices, 1991
- Physical considerations in vacuum microelectronics devicesIEEE Transactions on Electron Devices, 1989
- An ultraminiature solid-state pressure sensor for a cardiovascular catheterIEEE Transactions on Electron Devices, 1988
- Contamination-mediated deformation of graphite by the scanning tunneling microscopePhysical Review B, 1986
- Electron emission in intense electric fieldsProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1928