Diffusion in Compound Semiconductors
- 1 March 1961
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 121 (5) , 1305-1311
- https://doi.org/10.1103/physrev.121.1305
Abstract
Self-diffusion in single crystal InP and GaAs has been measured, together with the diffusion of the acceptors Cd and Zn and the donors S and Se in GaAs. Radioactive isotopes of these elements were used as tracers. The diffusions of In and P in InP are characterized by activation energies of 3.85 ev and 5.65 ev, respectively; those for Ga and As in GaAs are characterized by activation energies of 5.60 ev and 10.2 ev, respectively. The marked differences in both activation energies and diffusion rates of the constituent atoms in these materials indicate that the basic mechanism of the self-diffusion is one of migration within a specific sublattice.Keywords
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