FIR Laser Modulation by an External Variable Reactance
- 1 December 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 29 (4) , 277-283
- https://doi.org/10.1109/tim.1980.4314934
Abstract
Fast frequency modulation of an FIR laser by means of an external variable reactance is presented. In particular, the use of the varactor effect in a micrometer-size Schottky-barrier diode and of the electron density modulation in a cold plasma is considered. Experiments carried out on an optically pumped HCOOH line at 403.7 GHz are described and the results are compared with the theory developed. Peak-to-peak frequency deviation Δfpp of about 15 kHz and Q-limited bandwidth have been obtained with the varactor effect, whereas the plasma modulator yielded Δfpp of 6 kHz and a 20-kHz bandwidth.Keywords
This publication has 9 references indexed in Scilit:
- Injection locking of an optically pumped FIR laserIEEE Journal of Quantum Electronics, 1980
- Frequency instability measurements of the CH3OH optically pumped laser at 70.5 and 118 µmIEEE Journal of Quantum Electronics, 1979
- Design of molecular FIR lasers frequency tunable by stark effect: Electric breakdown of CH3OH, CH3F, CH3I and CH3CN∗Infrared Physics, 1979
- Comparison of Different Tuning and Modulation Techniques for F.I.R. LasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- FM-noise measurements on an optically pumped FIR laserIEEE Journal of Quantum Electronics, 1978
- High speed frequency modulation of far infrared lasers using the Stark effectApplied Optics, 1977
- On the frequency dependence of GaAs Schottky barrier capacitancesSolid-State Electronics, 1972
- A Proposal for a New Absolute Frequency Standard, Using a Mg or Ca Atomic BeamMetrologia, 1972
- Depletion layer capacitance of cyclindrical and spherical p-n junctionsSolid-State Electronics, 1967