Low-Field Galvanomagnetic Effects in Sn-Doped Bi Crystals at 77°K
- 1 November 1967
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (12) , 4852-4856
- https://doi.org/10.1063/1.1709233
Abstract
Measurements of weak-field galvanomagnetic effects in single crystals of bismuth doped with varying concentration of tin up to 4×1018 cm−3 are reported. In addition to the two resistivity components, ρ110 and ρ330, and the two Hall coefficients, R123 and R231, values for most of the second order galvanomagnetic coefficients, Aij, and some of the third- and fourth-order coefficients, Tijk and Fijk, are given. (The notation is that of Juretschke.) Some measurements on pure bismuth are also reported, and evidence is given that earlier workers did not use magnetic fields sufficiently small to avoid contributions from terms of higher order in magnetic field.This publication has 4 references indexed in Scilit:
- Galvanomagnetic Studies of Sn-Doped Bi. I. Positive Fermi EnergiesPhysical Review B, 1967
- Galvanomagnetic Effects and Magnetic Susceptibility of Tin-Doped Bismuth CrystalsJournal of the Physics Society Japan, 1967
- Galvanomagnetic Effects in BismuthPhysical Review B, 1956
- Symmetry of galvanomagnetic effects in antimonyActa Crystallographica, 1955