On the density of localized states obtainable from transient photodecay measurements
- 31 October 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 56 (4) , 323-326
- https://doi.org/10.1016/0038-1098(85)90394-1
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Transient photodecay measurements as a probe of the density of localized states in amorphous semiconductorsSolid State Communications, 1985
- Analysis of dispersive transport in amorphous semiconductors by discretization of a continuous distribution of localized statesPhilosophical Magazine Part B, 1985
- On the sensitivity of transient photodecay measurements as a probe of localised state distributions in amorphous semiconductorsSolid State Communications, 1984
- Carrier diffusion in amorphous semiconductorsReports on Progress in Physics, 1983
- Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States in -Physical Review Letters, 1981
- A physical interpretation of dispersive transport in disordered semiconductorsSolid State Communications, 1981
- Multiple-trapping model of anomalous transit-time dispersion inPhysical Review B, 1977
- A trap-limited model for dispersive transport in semiconductorsPhilosophical Magazine, 1977
- Theory of trap-controlled transient photoconductionPhysical Review B, 1977
- Monte Carlo simulation of anomalous transit-time dispersion of amorphous solidsPhysical Review B, 1977